sot-523 maximum ratings rating symbol value unit collectorCemitter voltage v ceo C 40 vdc collectorCbase voltage v cbo C 40 vdc emitterCbase voltage v ebo C 5.0 vdc collector current continuous i c C 200 madc thermal characteristics characteristic symbol ma x unit total device dissipation frC 4 board(1) p d 200 mw t a =25 c derate above 25c 1.6 mw/c thermal resistance junction to ambient r ja 600 c/w total device dissipation p d 300 mw fr-4 board (2), t a = 25c derate above 25c 2.4 mw/c thermal resistance junction to ambient r ja 400 c/w junction and storage temperature t j , t stg C55 to +150 c device marking m mbt3906tt1 = 2a electrical characteristics (t a =2 5 c unless otherwise noted) characteristic symbol min max unit off characteristics collectorCemitter breakdown voltage (3) v (br)ceo vdc (i c = C1.0 madc, i b = 0) C 40 collectorCbase breakdown voltage v (br)cbo vdc (i c = C10 adc, i e = 0) C 40 emitterCbase breakdown voltage v (br)ebo vdc (i e = C10 adc, i c = 0) C 5.0 base cutoff current i bl nadc (v ce = C30 vdc, v eb = C3.0 vdc) C 50 collector cutoff current i cex nadc (v ce = C30 vdc, v eb = C3.0 vdc) C 50 1. fr-4 minimum pad. 2. fr-4 1.0 x 1.0 inch pad. general purpose transistors pnp silicon 2 emitter 3 collector 1 base 3. pulse width < 300 s; duty cycle < 2.0%. feature ? simplifies circuit design. ? device marking shipping m mbt3906tt1 2a 3000/tape & reel ordering information rohs product for packing code suffix "g" halogen free product for packing code suffix "h" mm bt3906tt1 2012-11 willas electronic corp.
electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics (3) dc current gain h fe CC (i c = C0.1 madc, v ce = C1.0 vdc) 60 CC (i c = C1.0 madc, v ce = C1.0 vdc) 80 CC (i c = C10 madc, v ce = C1.0 vdc) 100 300 (i c = C50 madc, v ce = C1.0 vdc) 60 CC (i c = C100 madc, v ce = C1.0 vdc) 30 CC collectorCemitter saturation voltage v ce(sat) vdc (i c = C10 madc, i b = C1.0 madc) CC C 0.25 (i c = C50 madc, i b = C5.0 madc) CC C 0.4 baseCemitter saturation voltage v be(sat) vdc (i c = C10 madc, i b = C1.0 madc) C 0.65 C 0.85 (i c = C50 madc, i b = C5.0 madc) CC C 0.95 smallCsignal characteristics currentCgain bandwidth product f t mhz (i c = C10 madc, v ce = C20 vdc, f = 100 mhz) 250 CC output capacitance c obo pf (v cb = C5.0 vdc, i e = 0, f = 1.0 mhz) CC 4.5 input capacitance c ibo pf (v eb = C0.5 vdc, i c = 0, f = 1.0 mhz) CC 10 input impedance h ie k ? (v ce = C10 vdc, i c = C1.0 madc, f = 1.0 khz) 2.0 12 voltage feedback ratio h re x 10 C4 (v ce = C10 vdc, i c = C1.0 madc, f = 1.0 khz) 0.1 10 smallCsignal current gain h fe (v ce = C10 vdc, i c = C1.0 madc, f = 1.0 khz) 100 400 output admittance * h oe mhos (v ce = C10 vdc, i c = C1.0 madc, f = 1.0 khz) 3.0 60 noise figure nf db (v ce = C5.0vdc, i c = C100 adc, r s =1.0 k ? , f =1.0khz) CC 4.0 switching characteristics delay time (v cc = C 3.0 vdc, v be = 0.5 vdc, t d 3 5 rise time i c = C10 madc, i b1 = C1.0 madc) t d 3 5n s storage time (v cc = C3.0 vdc, i c = C10 madc, t s 225 ns fall time i b1 = i b2 = C1.0 madc) t f 7 5 3. pulse test: pulse width < 300 s; duty cycle < 2.0%. 2012-11 willas electronic corp. general purpose transistors mm bt3906tt1
figure 1. delay and rise time equivalent test circuit *total shunt capacitance of test jig and connectors 10 k 3 v 275 c s < 4.0 pf* 10 k 3 v 275 c s < 4.0 pf* 1n916 + 0.5 v 10 < t 1 < 500 s duty cycle = 2% 10.9 v <1ns <1 ns C 10.6 v t 1 + 9.1 v 0 figure 2. storage and fall time equivalent test circuit 300ns duty cycle = 2% typical transient characteristics i c , collector current (ma) figure 4. charge data reverse bias (volts) figure 3. capacitance v cc = 40 v i c / i b = 10 q t t j = 25c t j = 125c c obo c ibo q a 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 10.0 7.0 5.0 3.0 2.0 1.0 5000 3000 2000 1000 700 500 300 200 100 70 50 q, charge (pc) capacitance (pf) i c , collector current (ma) figure 6. fall time i c , collector current (ma) figure 5. turnCon time time (ns) t r , fall time (ns) v cc = 40 v i b1 = i b2 t r @v cc =3.0v 40 v i c /i b = 10 t d @v ob =0v 2.0 v 15 v 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 500 300 200 100 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 500 300 200 100 70 50 30 20 10 7 5 i c /i b = 10 i c /i b = 20 0 2012-11 willas electronic corp. general purpose transistors mm bt3906tt1
source resistance= 200 ? i c = 1.0 ma typical audio smallCsignal characteristics noise figure variations (v ce = C 5.0 vdc, t a = 25c, bandwidth = 1.0 hz) f, frequency (khz) figure 7. noise figure r g , source resistance (k ? ) figure 8. noise figure nf, noise figure (db) nf, noise figure (db) f = 1.0 khz i c = 0.5 ma source resistance =1.0k ? i c = 50 a source resistance= 500 ? i c = 100 a source resistance= 200 ? i c = 0.5 ma i c = 1.0 ma i c = 100 a i c = 50 a 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 12 10 8 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 14 12 10 8 6 4 2 0 h re , voltage feedback ratio (x 10 C4 ) h parameters (v ce = 10 vdc, f = 1.0 khz, t a = 25c) i c , collector current (ma) figure 9. current gain i c , collector current (ma) figure 10. output admittance i c , collector current (ma) figure 11. input impedance i c , collector current (ma) figure 12. voltage feedback ratio h fe , dc current gain h oe , output admittance ( mhos) h ie , input impedance (k ? ) 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 10 5.0 2.0 1.0 0.5 0.2 100 50 20 10 5 2 1 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 2012-11 willas electronic corp. general purpose transistors mm bt3906tt1
typical static characteristics i b , base current (ma) figure 14. collector saturation region i c , collector current (ma) figure 13. dc current gain i c , collector current (ma) figure 16. temperature coefficients c , collector current (ma) figure 15. on voltages h fe , dc current gain (normalized) v ce , collector emitter voltage (volts) v, voltage ( volts ) coefficient (mv/ c) i c =1.0 ma t j = 25c +25c to +125c vc for v ce(sat) t j = +125c v ce = 1.0 v +25c C55c 10 ma t j = 25c 30 ma 100 ma v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ v ce =1.0 v C55c to +25c +25c to +125c C55c to +25c vb for v be(sat) 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0 5.0 10 20 50 100 200 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 180 200 1.0 0.5 0 C 0.5 C1.0 C1.5 C2.0 2012-11 willas electronic corp. general purpose transistors mm bt3906tt1
sot - 523 dimensions in inches and (millimeters) .043(1.10) .035(0.90) .069(1.75) .057(1.45) .004(0.10)min. .008(0.20) .004(0.10) .035(0.90) .028(0.70) .006(0.15) .014(0.35) .004(0.10)max. .067(1.70) .059(1.50) .035(0.90) .028(0.70) .014(0.35) .010(0.25) 2012-11 willas electronic corp. general purpose transistors mm bt3906tt1
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